CY14B104NA-BA25XI Infineon Technologies NVRAM - 商品詳細情報
CY14B104NA-BA25XI
CY14B104NA-BA25XI
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Produktübersicht
NVRAM NVSRAM Parallel 4Mbit 3V 48-Pin FBGA Tray
Lifecycle Status : Active
ECCN
: 3A991b.2.a.
HTSN : 8542320041
Datenblatt
Datasheet(English) | EN_Cypress Semiconductor_Datasheet_20150211055038912 |
Datasheet(English) | EN_Cypress Semiconductor_Datasheet_20180309133032336 |
Design/Simulation Data
Other Documents
Datenblatt | |
---|---|
Datasheet(English) | EN_Cypress Semiconductor_Datasheet_20150211055038912 |
Datasheet(English) | EN_Cypress Semiconductor_Datasheet_20180309133032336 |
Specifications
- Herstellername
- Infineon Technologies
- Produktname
- CY14B104NA-BA25XI
- Produkt Klassifikation
- NVRAM
- Lifecycle Status
- Active
- RoHS
- RoHS
- Memory configuration
- 256Kx16
- Power-supply voltage
- 2.7 to 3.6V
- Package
- 48-TFBGA
- Memory type
- nvSRAM
- Type
- Nonvolatile memory
- Other names
- 2015-CY14B104NA-BA25XI | CY14B104NABA25XI | SP005640697 | 2156-CY14B104NA-BA25XI | CYPCYPCY14B104NA-BA25XI | 2832-CY14B104NA-BA25XI | -CY14B104NA-BA25XI
- Memory size
- 4M
- Operating temperature range
- -40 to 85C
- Herstellerverpackung
- Tray
- Hersteller Verpackungsmenge
- 299
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