Active clamp structure prevents overvoltage when inductive load is switched off

 

June 21, 2013

 

TOKYO – Toshiba Corporation (TOKYO: 6502) today announced that it has launched a MOSFET, "SSM3K337R", for relay drivers. The new device uses an active clamp structure that prevents overvoltage when the inductive load of relay devices is switched off. Sample is available and mass production is scheduled to start in September.
Demand for relay drivers is growing for automobile, since the number of electric components equipped by automobile is increasing.
The "SSM3K337R" reduces ON-resistance by half and improves allowable power dissipation to approximately 1.6 times that of equivalent products.

 

 

Key Features
■Active clamp structure reduces stress by inductive load of relay devices.
■ON-resistance is reduced by half.
■Allowable power dissipation is improved to approximately 1.6 times, with SOT-23F package.

 

 

For more information about the product, please see the product page.
http://www.semicon.toshiba.co.jp/eng/product/new_products/transistor/1323380_37649.html?mm=cp0621&no=03

 

 

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

 

 

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞
http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp0621&no=04

 

 

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Companies Website:
http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp0621&no=04

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