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News Center

NXP、BLF184XR & BLF188XR Power LDMOS transistor

2014/02/27NXP Semiconductors  Power Supply

 

Product Feature
BLF184XR

Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


BLF188XR
Easy power control
Integrated ESD protection


Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


Applications
Terrestrial broadcast systems
- FM transmitters
- IBOC digital radio
- VHF TVs
ISM applications
- Igniting plasmas and lasers
- Synchrotrons
- MRIs

 

Description

The XR family delivers stability and unsurpassed ruggedness performance under the most severe load mismatch conditions (VSWR greater than 65:1 at P3dB). Leading the product portfolio are the BLF188XR(S) and the BLF184XR(S). These new devices build on our proven track record as a leading RF power transistor supplier and extend our portfolio, bringing extreme ruggedness, linearity, stability, power and simplicity in design.XR LDMOS devices are ideal for demanding (kW) professional smart RF energy applications in the ISM (Industrial, Scientific and Medical) frequency bands – from igniting plasmas and lasers to powering synchrotrons and MRIs. They also give a real power and efficiency performance boost to terrestrial broadcasting. Offering the highest efficiency solutions in FM broadcast transmitters, they also provide superior correctable linear performance and pre-distortion characteristics for IBOC Digital Radio, VHF-TV and other linear applications.

 

 

 

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Companies Website:
http://www.nxp.com/

NXP Semiconductors News Release

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