NXP、BLF184XR & BLF188XR Power LDMOS transistor 2014/02/27 NXP Semiconductors
Power Supply
Product Feature BLF184XR Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
BLF188XR Easy power control Integrated ESD protection
Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications Terrestrial broadcast systems - FM transmitters - IBOC digital radio - VHF TVs ISM applications - Igniting plasmas and lasers - Synchrotrons - MRIs
Description
The XR family delivers stability and unsurpassed ruggedness performance under the most severe load mismatch conditions (VSWR greater than 65:1 at P3dB). Leading the product portfolio are the BLF188XR(S) and the BLF184XR(S). These new devices build on our proven track record as a leading RF power transistor supplier and extend our portfolio, bringing extreme ruggedness, linearity, stability, power and simplicity in design.XR LDMOS devices are ideal for demanding (kW) professional smart RF energy applications in the ISM (Industrial, Scientific and Medical) frequency bands – from igniting plasmas and lasers to powering synchrotrons and MRIs. They also give a real power and efficiency performance boost to terrestrial broadcasting. Offering the highest efficiency solutions in FM broadcast transmitters, they also provide superior correctable linear performance and pre-distortion characteristics for IBOC Digital Radio, VHF-TV and other linear applications.
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Companies Website:
http://www.nxp.com/
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