IRFP250MPBF Infineon Technologies MOSFET - 商品詳細情報
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Specifications
- Herstellername
- Infineon Technologies
- Produktname
- IRFP250MPBF
- Produkt Klassifikation
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- HEXFET(R)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-247-3
- Drain to Source voltage
- 200V
- Continuous drain current
- 30A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 75mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 123nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 2159pF
- Power consumption
- 214W
- Operating temperature range
- -55 to 175C
- Other names
- INFINFIRFP250MPBF | 2156-IRFP250MPBF | SP001566168
- Type
- Power MOSFET
- Herstellerverpackung
- Tube
- Hersteller Verpackungsmenge
- 400
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