February 1, 2017

 

TOKYO—Toshiba Corporation’s (TOKYO: 6502) Storage & Electronic Devices Solutions Company today announced the launch of 600V/650V super junction N-channel power MOSFETs with improved EMI performance for use in industrial and office equipment. The new “DTMOS V series” will start with a line-up of twelve products. Sample shipments start today with mass production shipments scheduled for the middle of March.
 

The new series maintains the same level of low on-resistance and high speed switching performance of Toshiba’s current “DTMOS IV series,” while an optimized design process improves EMI performance by approximately 3 to 5dB[1]. Also, reducing the on-resistance per area (RON x A) performance made it possible to add a new 650V 0.29Ω product into the DPAK package line-up. Products in the new series are suited for use in power supplies for industrial and office equipment that require high efficiency and compact size, adaptors and chargers for notebook PCs and mobile devices, and PCs and printers.
 

Line-up and Main Specifications of New MOSFETs

 

Notes

[1] At 150 to 210MHz by using Toshiba evaluation boards. Toshiba survey.

Follow the link below for more on the new products and the Toshiba mid-high voltage power MOSFET line-up.

https://toshiba.semicon-storage.com/ap-en/product/mosfet/hv-mosfet.html?mm=cp170201&no=03

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞http://toshiba.semicon-storage.com/ap-en?mm=cp170201&no=04

 

 

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http://toshiba.semicon-storage.com/ap-en?mm=cp170201&no=04

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