- Three new devices boost efficiency and power density of industrial equipment -

August 28, 2025

KAWASAKI, Japan– Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched three 650V silicon carbide (SiC) MOSFETs equipped with its latest[1] 3rd generation SiC MOSFET chips and housed in surface-mount TOLL packages. The new devices are suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators. Volume shipments of the MOSFETs, “TW027U65C,” “TW048U65C,” and “TW083U65C,” start today.

The new products are Toshiba’s 3rd generation SiC MOSFETs in a general-purpose surface-mount TOLL package, which reduces device volume by more than 80% compared to through-hole packages such as TO-247 and TO-247-4L(X), and improves equipment power density.

The TOLL package also offers lower parasitic impedance[2] than through-hole packages, which helps to reduce switching losses. As a 4-terminal[3] package, a Kelvin connection can be used as the signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW048U65C, turn-on loss and turn-off loss are approximately 55% and 25%[4] lower, respectively, than in current Toshiba products[5], which will contribute to lower equipment power loss.

Toshiba will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity.

Notes:

[1] As of August 2025.

[2] Resistance, inductance, etc.

[3] A product with a signal-source terminal connected close to the FET chip.

[4] As of August 2025, values measured by Toshiba.

[5] A 650V 3rd generation SiC MOSFET with equivalent voltage and On-resistance that uses the TO-247 package without Kelvin connection. 

Applications

・Switched-mode power supplies in servers, data centers, communications equipment, etc.

・EV charging stations

・Photovoltaic inverters

・Uninterruptible power supplies

Features

・Surface-mount TOLL package: Enables equipment miniaturization and automated assembly. Low switching loss.

・Toshiba’s 3rd generation SiC MOSFETs:

　- Optimization of drift resistance and channel resistance ratio realizes good temperature dependence of drain-source On-resistance.

　- Low drain-source On-resistance×gate-drain charges

　- Low diode forward voltage: VDSF=-1.35V (typ.) (VGS=-5V)

Follow the link below for more on the new product.

*Company names, product names, and service names may be trademarks of their respective companies.

*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.