"The Bourns^® Model BID Series discrete insulated gate bipolar transistor (IGBT) products combine technology from a MOSFET gate and a bipolar transistor, resulting in an optimum solution for high voltage and high current applications. These devices use Trench-Gate Field-Stop (TGFS) technology providing excellent control of dynamic characteristics while resulting in a lower collector-emitter saturation voltage (VCE(sat)) and lower switching losses. In addition, the devices provide a lower thermal resistance (Rth(j-c)) due to the thermally efficient TO-252, TO-247 and TO-247N packages. These cost effective, industry-leading products are also RoHS compliant.

Bourns® Model BID Series IGBT Features:

• ・IGBT co-packed with Fast Recovery Diode (FRD)
• ・Advanced Trench-Gate Field-Stop (TGFS) technology
• ・Low saturation voltage drop (VCE(sat))
• ・Low switching loss
• ・TO-252, TO-247 and TO-247N packages
• ・Qualified according to JEDEC standard for power switching products
• ・RoHS compliant

Bourns^® BID Series is designed to address the power management needs of several highvolume, high-growth applications including home appliances, industrial motor drives, and welding. Through advanced trench-gate-field-stop technology that enables low conduction and switching losses, these Bourns^® IGBTs address the growing need for cost-effective power efficiency."