Second-generation devices provide improved surge peak forward current and figure of merit, now in a surface-mount type package

October 17, 2017

TOKYO— Toshiba Electronic Devices & Storage Corporation (TDSC) has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in surface-mount packages. Volume shipments start today.
 

Until now, TDSC has focused on SiC SBDs in through-hole packages. The addition of TDSC’s first SiC SBDs in surface-mount packages (nicknamed DPAK) meets customer needs to reduce system size and thickness.
 

The new SiC SBDs incorporate Toshiba’s latest second-generation chip, which delivers improvements in surge peak forward current (IFSM) and figure of merit (VF・Qc[1]). The devices offer enhanced ruggedness and low loss, which helps to improve system efficiency and simplify thermal design.

TDSC will continue to expand its product portfolio in order to help improve the efficiency and reduce the size of communications equipment, servers, inverters and other products.

Features
High surge peak forward current:
Approx. 7 to 9.5 times the current rating, IF(DC)

Low figure of merit (VF・Qc):
About 1/3 lower than first generation products, indicating high efficiency.

Surface-mount package:
Enables auto mounters and helps to reduce system size and thickness

Applications
The new SiC SBDs are suitable for a wide range of commercial and industrial applications, including PFC circuitry in high-efficiency power supplies.
・Consumer and OA products: power supply for large screen 4K LCD & OLED TV sets, projectors, multifunction copiers, etc.
・Industrial equipment: power supply for telecommunication base stations, PC servers, solar microinverters, etc.
・For circuits: power factor correction (PFC) circuits; micro inverter circuits; chopper circuits (various power supplies of hundreds of watts or more).
・Free-wheel diode for switching device.

Main Specifications

 

Note:
[1] Qc : Electric charge amount of capacitance Cj between 0.1 V and 400 V.

Follow the link below for more on TDSC’s SiC Schottky Barrier Diode line-up.
https://toshiba.semicon-storage.com/ap-en/product/diode/sic.html?mm=cp171017&no=03

Toshiba Electronic Devices & Storage Corporation’s Website＞
https://toshiba.semicon-storage.com/ap-en?mm=cp171017&no=04

 

Companies Website:
https://toshiba.semicon-storage.com/ap-en?mm=cp171017&no=04

Toshiba News Release

• Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET with Low On-Resistance and High Reliability, for Use in Automotive Traction Inverters

  2024/11/13Toshiba  Automotive

• Toshiba Starts Sample Shipments of Gate Driver IC for Three-Phase Brushless DC Motors in Diverse Automotive Applications

  2024/11/01Toshiba  Automotive

• Toshiba Releases Automotive Photorelay with Output Withstand Voltage of 900V, Housed in a Small Package

  2024/10/28Toshiba  Automotive

• Toshiba’s 1200V Additions to its Lineup of Third-Generation SiC Schottky Barrier Diodes Will Contribute to High Efficiency in Industrial Power Equipment

  2024/09/26Toshiba  Power Supply

• Toshiba Is Sampling an Automotive CXPI Responder Interface IC that Contributes to Shorter Software Development Times

  2024/09/05Toshiba  Automotive

Related News Release

• STMicroelectronics releases standard-threshold 40V MOSFETs in enhanced STripFET F8 technology

  2024/12/26  STMicroelectronics  Power Supply

• 250W MasterGaN reference design from STMicroelectronics fast-tracks compact, efficient industrial power supplies

  2024/12/25  STMicroelectronics  Power Supply

• Miniature encapsulated AC/DCs have extended specifications

  2024/11/28  Recom  Power Supply

• STMicroelectronics’ unveils new STSPIN32G0 series of motor drivers for industrial applications and home appliances

  2024/11/18  STMicroelectronics  Power Supply

• SMD Power Modules Provide Flexible Gate Drive Bias Voltages

  2024/10/31  Recom  Power Supply