November 6, 2013

 

TOKYO – Toshiba Corporation (TOKYO: 6502) today announced that it has launched "DF4D7M2G", a small-sized electrostatic discharge (ESD) protection diode that supports two lines of high speed data transmission. Mass production is scheduled to start in December.

 

ESD protection diodes are designed to absorb electrostatic discharge (ESD) energy from I/O ports.

 

The diode reduces terminal capacitance to 0.2pF (Typ.), enabling use for ESD protection in high speed interfaces, such as USB3.0 in mobile devices and low noise amplifiers in RF antennas. Adoption of small WCSP4 package reduces package size by 50% compared to equivalent products[1], contributing to high density mounting.

 

Key Features of New Product
■Reduction of terminal capacitance enables use in high-speed transmission lines: Ct=0.2pF (typ.)

■Adoption of small packages allows high density mounting: WCSP4 (0.79×0.79mm, 0.4mm pitch)

■Compliant with electrostatic discharge immunity tests IEC61000-4-2: ±8kV (Contact), ±15kV (Air)

 

Applications
ESD protection for high-speed interfaces and RF antennas

 

Note:

·[1]: Comparison with "DF6D7M1N"

 

For more information about the product, please visit:

http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=DF4D7M2G&lang=en?mm=cp1106&no=03

 

 

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

 

 

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞

 

http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp1106&no=04

 

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Companies Website:
http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp1106&no=04

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