DTA013ZEBTL Rohm Pre-Biased Bipolar Transistor - 商品詳細情報
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DTA013ZEBTL
DTA013ZEBTL
PNP, SOT-416FL, R1≠R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor)
HTSN : 8541210075
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Datasheet | EN_Rohm_データシート_20161101101043391 |
Datasheet | EN_Rohm_Datasheet_20210617195625734 |
Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Data Sheet | |
---|---|
Datasheet | EN_Rohm_データシート_20161101101043391 |
Datasheet | EN_Rohm_Datasheet_20210617195625734 |
Environmental and Reliability Data | |
Other Environmental and Reliability Data | Moisture Sensitivity Level |
Design and Simulation Data | |
Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Rohm
- Product name
- DTA013ZEBTL
- Product classification
- Pre-Biased Bipolar Transistor
- Lifecycle Status
- Active
- RoHS
- RoHS
- Transistor type
- PNP-Prebias
- Collector-emitter voltage
- 50V
- Collector current
- 100mA
- Package
- SC-89|SOT-490
- Other names
- DTA013ZEBTLTR | DTA013ZEBTLDKR | DTA013ZEBTLCT
- Current-Collector (Ic) (maximum)
- 100mA
- Current-Collector cutoff (maximum)
- 500nA
- DC current gain (hFE) (minimum)
- 30@5mA,10V
- DC electricity gain
- 30@5mA|10V
- Frequency-Transition
- 250MHz
- Mounting Type
- Surface Mount
- Package (Supplier)
- EMT3F(SOT-416FL)
- Power-Maximum
- 150mW
- Rated power
- 150mW
- Resistance-Base (R1)
- 1kOhm
- Resistance-Emitter base (R2)
- 10kOhm
- Vce Saturation (maximum)
- 150mV@500uA|5mA
- Voltage-Collector-emitter breakdown (maximum)
- 50V
- Manufacturer packaging quantity
- 600
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