DTA015TEBTL Rohm Pre-Biased Bipolar Transistor - 商品詳細情報
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DTA015TEBTL
DTA015TEBTL
Trans Digital BJT PNP 50V 100mA 3-Pin EMTF T/R
HTSN : 8541210075
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Datasheet | EN_Rohm_データシート_20161101101043933 |
Datasheet | EN_Rohm_Datasheet_20210617195242402 |
Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Data Sheet | |
---|---|
Datasheet | EN_Rohm_データシート_20161101101043933 |
Datasheet | EN_Rohm_Datasheet_20210617195242402 |
Environmental and Reliability Data | |
Other Environmental and Reliability Data | Moisture Sensitivity Level |
Design and Simulation Data | |
Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Rohm
- Product name
- DTA015TEBTL
- Product classification
- Pre-Biased Bipolar Transistor
- Lifecycle Status
- Active
- RoHS
- RoHS
- Transistor type
- PNP-Prebias
- Collector-emitter voltage
- 50V
- Collector current
- 100mA
- Package
- SC-89|SOT-490
- Other names
- DTA015TEBTLDKR | 846-DTA015TEBTLTR | DTA015TEBTLTR | DTA015TEBTLCT
- Current-Collector (Ic) (maximum)
- 100mA
- Current-Collector cutoff (maximum)
- 500nA(ICBO)
- DC current gain (hFE) (minimum)
- 100@5mA,10V
- DC electricity gain
- 100@5mA|10V
- Frequency-Transition
- 250MHz
- Mounting Type
- Surface Mount
- Package (Supplier)
- EMT3F(SOT-416FL)
- Power-Maximum
- 150mW
- Rated power
- 150mW
- Resistance-Base (R1)
- 100kOhm
- Vce Saturation (maximum)
- 250mV@250uA|5mA
- Voltage-Collector-emitter breakdown (maximum)
- 50V
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 3000
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