Chip One Stop - Shopping Site for Electronic Components and Semiconductors
Menu
Puerto Rico
Change
English
SELECT YOUR LANGUAGE
USD
SELECT YOUR CURRENCY FOR DISPLAY
About Preferential Rank / Discount

Current price of Item(s) have been applied below.
 


・Preferential Rank and Discount rate will be applied according to your usage of our web service.
・Discount is only applicable to orders from chip1stop web site.
・Discounts may not be applicable to all products and may be subject to MOQ.
・Please contact your representative for details of Preferential Rank.
・No other coupons may be used in conjunction with this discount.

News Center

New M-Series IGBTs from STMicroelectronics Raise Energy Efficiency and Ruggedness for Solar and Industrial Power

2015/04/21STMicroelectronics  Power Supply

 

With breakdown voltages ranging from 350 V to 1300 V, ST’s IGBTs feature the optimal trade-off between switching performance and on-state behavior due to their proprietary technology, delivering greater all-around energy-efficient system designs in applications such as motor control, photovoltaic, UPS, automotive, induction heating, welding, lighting and others.


Some of the highlights of our IGBT portfolio are as follows:


•Low VCE(SAT) for reduced conduction losses
•Improved switch-off energy spread versus increasing temperature resulting in reduced switching losses
•Tight parameter distribution for design simplification and easy paralleling
•Co-packaged tailored anti-parallel diode option for improved power dissipation and best thermal management
These IGBTs are based on both standard punch-through technology, ideal for white goods, and the newly introduced trench-gate field-stop technology which enables extremely fast turn-off times with minimal tail currents, stable behavior over temperature, and a low VCE(SAT) that, coupled with the positive derating with temperature, improves the applications’ efficiency.


1200 V trench-gate field-stop IGBT M series
Optimized for hard-switching applications up to 20 kHz, the M series of 1200 V IGBTs combines the industry’s best trade-off between conduction and switching-off energy with outstanding robustness and EMI behavior for more efficient and reliable industrial motor drives, solar inverters, UPS and welding equipment. Based on the third generation of trench-gate field-stop technology, the devices also benefit from improved efficiency at turn-on thanks to a latest-generation co-packaged fast recovery anti-parallel diode which also features enhanced softness.


Visit Chip1Stop Chinese site
Visit Chip1Stop Korean site
Visit Chip1Stop English site
Visit Chip1Stop German site


Companies Website:
http://www.st.com/

STMicroelectronics News Release

Related News Release