September 19, 2013

 

TOKYO—Toshiba Corporation (TOKYO: 6502) today announced that it will expand its family of 650V silicon carbide (SiC) schottky barrier diodes (SBD) with the addition of a 10A product to the existing line-up of 6A, 8A and 12A products. Mass production shipments will start from today.

 

SBDs are suited for diverse applications, including power conditioners for photovoltaic power generation systems. They can also replace silicon diodes in switching power supplies, where they are 50% more efficient (Toshiba data).

 

SiC power devices offer more stable operation than current silicon devices–even at high voltages and currents–as they significantly reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and their industrial applications range from servers to inverters.

 

New product

Current line-up

Follow this link for more on this product.

http://www.semicon.toshiba.co.jp/eng/product/diode/sic/index.html?mm=cp0920&no=03

 

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

 

 

 

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞

 

http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp0920&no=04

 

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Companies Website:
http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp0920&no=04

Toshiba News Release

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• Toshiba’s 1200V Additions to its Lineup of Third-Generation SiC Schottky Barrier Diodes Will Contribute to High Efficiency in Industrial Power Equipment

  2024/09/26Toshiba  Power Supply

• Toshiba Is Sampling an Automotive CXPI Responder Interface IC that Contributes to Shorter Software Development Times

  2024/09/05Toshiba  Automotive

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