June 13, 2013

 

Toshiba Corporation today announced that the development of the world's first MROM cell to offer improved cell current characteristics without any increase in cell size. This advance was achieved by adopting a multi-level-cell structure, which also secures high speed operation. Details will be presented on June 14 at the 2013 Symposia on VLSI Technology and Circuits, held in Kyoto, Japan, June 11-14, 2013.

 

 

MROM's main role is to store the boot loader or firmware. The density of MROM implemented is SoC for such digital applications as smartphones and tablet PCs is increasing year by year, and in order to improve access time it is necessary to halve the MROM cell area with every generation.

 

 

In a typical MROM bit cell, a single-level cell, variations in fabrication are increasing as SoC process technology advances, with the narrowing of the channel area of the cell transistors. The result is a slower access time for the 40nm generation than for the previous process generation. Improving access time requires a larger transistor, as a bigger cell area secures a wider channel area.

 

 

Toshiba has developed a multi-bit cell that uses twice the area of a standard single level cell, successfully expanding channel width in the cell transistor by three times. This also triples the current characteristic of the cell without any change in the memory capacity per area. It reduces the influence of the variation in fabrication by 42%.

 

 

Toshiba has developed of MROM cell with the 40nm process generation and aims to ship SoC for digital applications that implement the cell in 2014.

 

 

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

 

 

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞
http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp0613&no=04

 

 

 

Visit Chip1Stop Chinese site
Visit Chip1Stop Korean site
Visit Chip1Stop English site
Visit Chip1Stop German site

Companies Website:
http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp0613&no=04

Toshiba News Release

• Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET with Low On-Resistance and High Reliability, for Use in Automotive Traction Inverters

  2024/11/13Toshiba  Automotive

• Toshiba Starts Sample Shipments of Gate Driver IC for Three-Phase Brushless DC Motors in Diverse Automotive Applications

  2024/11/01Toshiba  Automotive

• Toshiba Releases Automotive Photorelay with Output Withstand Voltage of 900V, Housed in a Small Package

  2024/10/28Toshiba  Automotive

• Toshiba’s 1200V Additions to its Lineup of Third-Generation SiC Schottky Barrier Diodes Will Contribute to High Efficiency in Industrial Power Equipment

  2024/09/26Toshiba  Power Supply

• Toshiba Is Sampling an Automotive CXPI Responder Interface IC that Contributes to Shorter Software Development Times

  2024/09/05Toshiba  Automotive

Related News Release

• Winbond’s LPDDR4/4X: A Green Solution for the Automotive Industry

  2024/11/29  Winbond Electronics  Processor/Memory

• STMicroelectronics reveals Page EEPROM two-in-one memory to boost smart-edge performance and efficiency

  2024/10/08  STMicroelectronics  Processor/Memory

• Winbond has unveiled its latest 1Gb QspiNAND for Wearable and Low-Power IoT Devices.

  2024/08/08  Winbond Electronics  Processor/Memory

• STMicroelectronics powers up the intelligent edge with second-generation STM32 microprocessors, bringing performance boost and industrial resilience

  2024/03/18  STMicroelectronics  Processor/Memory

• Winbond Introduces Innovative CUBE Architecture for Powerful Edge AI Devices

  2023/09/27  Winbond Electronics  Processor/Memory