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Microchip's new 2.4 GHz RF high-power amplifier offers low EVM and current for 256-QAM and 802.11b/g/n; extends range of ultra-high data rate WLANs

2014/10/10Microchip Technology  RF & Micro Wave

 

SST12CP21 is a high-power and high-gain power amplifier (PA) based on the highly-reliable InGaP/GaAs HBT technology. This PA can be easily configured for high-power applications with high power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It typically provides 37 dB gain with 25% power-added efficiency @ POUT = 28 dBm for 802.11g. SST12CP21 has excellent linearity, typically 25 dBm at 3% EVM with 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 28 dBm. SST12CP21 also has a single-ended power detector which lowers the users’ cost for power control. SST12CP21 is offered in 16-contact UQFN package.

Features 


High Gain:- Typically 37 dB gain across 2.4–2.5 GHz over temperature -20°C to +85°C
High linear output power: 
>30 dBm P1dB- Meets 802.11g OFDM spectrum mask requirement up to 28 dBm
Meets 802.11b ACPR requirement up to 28 dBm
Typically 25 dBm with <3% EVM, 802.11g,54 Mbps at 350 mA
Typically 24 dBm with <2.5% EVM, 802.11n,MCS7-HT20, 50% duty cycle
Typically 23 dBm with <1.75% EVM, MCS9HT40,50% duty cycle at 320 mA
Packages available- 16-contact UQFN (3mm x 3mm)- Pin-to-pin SE2623L

 

Applications
WLAN (IEEE 802.11b/g/n)
WLAN 256 QAM
AP router
Home RF
Cordless phones
2.4 GHz ISM wireless equipment 


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