22 Feb, 2017

 

TOKYO—Toshiba Corporation (TOKYO: 6502) has today unveiled the latest addition in its industry-leading line-up of BiCS FLASHTM three-dimensional flash memory with a stacked cell structure*1, a 64-layer device that achieves a 512-gigabit (64-gigabytes) capacity with 3-bit-per-cell (triple-level cell, TLC) technology. The new device will be used in applications that include enterprise and consumer SSD. Sample shipments of the chip started this month, and mass production is scheduled for the second half of this calendar year.

Toshiba continues to refine BiCS FLASHTM, and the next milestone on its development roadmap is the industry’s largest capacity*2, a 1-terabyte product with a 16-die stacked architecture in a single package. Plans call for the start of sample shipments in April 2017.

For the new 512-gigabit device, Toshiba deployed leading-edge 64-layer stacking process to realize a 65% larger capacity per unit chip size than the 48-layer 256-gigabit (32-gigabytes) device, and has increased memory capacity per silicon wafer, reducing the cost per bit.

Toshiba’s Memory business already mass produces 64-layer 256-gigabit (32-gigabytes) devices and will expand BiCS FLASHTM production. It will advance 3D technology to realize increased densities and finer processes in order to meet diversifying market needs.

Note:

[1]   A structure stacking Flash memory cells vertically on a silicon substrate to realize significant density improvements over planar NAND Flash memory, where cells are formed on the silicon substrate.

[2]   As of February 22, 2017. Toshiba survey.

* BiCS FLASH is a trademark of Toshiba Corporation.

Information in the press releases, including product prices and specifications, content of services and contact information, is current on the date of the press announcement, but is subject to change without prior notice.

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞http://toshiba.semicon-storage.com/ap-en?mm=cp170222&no=06

 

Visit Chip1Stop Chinese site
Visit Chip1Stop Korean site
Visit Chip1Stop English site
Visit Chip1Stop German site

Companies Website:
http://toshiba.semicon-storage.com/ap-en?mm=cp170222&no=06

Toshiba News Release

• Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET with Low On-Resistance and High Reliability, for Use in Automotive Traction Inverters

  2024/11/13Toshiba  Automotive

• Toshiba Starts Sample Shipments of Gate Driver IC for Three-Phase Brushless DC Motors in Diverse Automotive Applications

  2024/11/01Toshiba  Automotive

• Toshiba Releases Automotive Photorelay with Output Withstand Voltage of 900V, Housed in a Small Package

  2024/10/28Toshiba  Automotive

• Toshiba’s 1200V Additions to its Lineup of Third-Generation SiC Schottky Barrier Diodes Will Contribute to High Efficiency in Industrial Power Equipment

  2024/09/26Toshiba  Power Supply

• Toshiba Is Sampling an Automotive CXPI Responder Interface IC that Contributes to Shorter Software Development Times

  2024/09/05Toshiba  Automotive

Related News Release

• Quobly Forges Strategic Collaboration with STMicroelectronics to Accelerate its Quantum Processor Manufacturing for Large-Scale Quantum Computing Solutions

  2024/12/24  STMicroelectronics  Processor/Memory

• Winbond’s LPDDR4/4X: A Green Solution for the Automotive Industry

  2024/11/29  Winbond Electronics  Processor/Memory

• STMicroelectronics reveals Page EEPROM two-in-one memory to boost smart-edge performance and efficiency

  2024/10/08  STMicroelectronics  Processor/Memory

• Winbond has unveiled its latest 1Gb QspiNAND for Wearable and Low-Power IoT Devices.

  2024/08/08  Winbond Electronics  Processor/Memory

• STMicroelectronics powers up the intelligent edge with second-generation STM32 microprocessors, bringing performance boost and industrial resilience

  2024/03/18  STMicroelectronics  Processor/Memory