June 28, 2013

 

Launches 60V products with top class[1] low ON-resistance performance and high-speed switching

 

TOKYO – Toshiba Corporation (TOKYO: 6502) today announced the addition of 60V voltage products to its power MOSFET line-up for general-purpose DC-DC converters used in base stations and servers. The products use the latest 8th generation low-voltage trench structure and achieve the highest class[1] of low ON-resistance and high-speed switching. Mass production starts from today.

 

 

Key Features
■Uses the 8th generation low-voltage trench structure and achieves top class[1] low ON-resistance
■Achieves low internal gate resistance and a low gate capacity ratio (Cgd/Cgs), which contributes to prevention of the self turn-on phenomenon.

 

 

Main specifications

Note
[1] Source: Toshiba Corporation, June, 2013.

 

Follow this link for more on this product.
http://www.semicon.toshiba.co.jp/eng/product/new_products/transistor/1323990_37649.html?mm=cp0701&no=05

 

 

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

 

 

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞
http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp0701&no=06

 

 

 

 

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Companies Website:
http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp0701&no=06

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