May 30, 2014

 

TOKYO— Toshiba Corporation’s (TOKYO: 6502) Semiconductor & Storage Products Company today announced that it will expand its family of 650V silicon carbide (SiC) schottky barrier diodes (SBD) with the addition of insulated TO-220F-2L package products. The 4 new products expand the 6A, 8A, 10A and 12A line-up from the current TO-220-2L package products. Mass production shipment starts from today.

 

SBDs are suited for applications including server power supplies and power conditioners for photovoltaic power generation systems. SBDs can also act as replacements for silicon diodes in switching power supplies, where they are 50% more efficient (Toshiba survey).

 

SiC power devices offer more stable operation than current silicon devices - even at high voltages and currents - as they significantly reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and suit industrial applications ranging from servers to inverters.

Key Specifications of the New Products

 

Current Line-up

 

Follow this link for more on Toshiba SiC schottky barrier diodes.

http://www.semicon.toshiba.co.jp/eng/product/diode/sic/index.html?mm=cp140530&no=03

 

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

 

 

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞

 

http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp140530&no=04

 

Visit Chip1Stop Chinese site
Visit Chip1Stop Korean site
Visit Chip1Stop English site
Visit Chip1Stop German site

Companies Website:
http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp140530&no=04

Toshiba News Release

• Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET with Low On-Resistance and High Reliability, for Use in Automotive Traction Inverters

  2024/11/13Toshiba  Automotive

• Toshiba Starts Sample Shipments of Gate Driver IC for Three-Phase Brushless DC Motors in Diverse Automotive Applications

  2024/11/01Toshiba  Automotive

• Toshiba Releases Automotive Photorelay with Output Withstand Voltage of 900V, Housed in a Small Package

  2024/10/28Toshiba  Automotive

• Toshiba’s 1200V Additions to its Lineup of Third-Generation SiC Schottky Barrier Diodes Will Contribute to High Efficiency in Industrial Power Equipment

  2024/09/26Toshiba  Power Supply

• Toshiba Is Sampling an Automotive CXPI Responder Interface IC that Contributes to Shorter Software Development Times

  2024/09/05Toshiba  Automotive

Related News Release

• STMicroelectronics’ failsafe comparators with guaranteed start-up time boost reliability and power savings

  2024/12/03  STMicroelectronics  Analog

• Flexible, space-saving class-D amplifier for in-car audio, from STMicroelectronics, adds automotive-optimized diagnostics

  2024/09/30  STMicroelectronics  Analog

• ROHM Group Company SiCrystal and STMicroelectronics Expand Silicon Carbide Wafer Supply Agreement

  2024/04/23  STMicroelectronics  Analog

• STMicroelectronics’ SiC-based digital power solution selected by Compuware for high-efficiency and reliable server power supply

  2024/04/02  STMicroelectronics  Analog

• STMicroelectronics boosts silicon power performance with automotive-grade MDmesh DM9 super-junction MOSFETs

  2024/03/18  STMicroelectronics  Analog